IXYS SEMICONDUCTORS 2005 Catalog Section IGBT & Rectifier Modules

下载资料简介：
The IGBT is a combination of bipolar and MOS
technologies. The best features of bipolar
transistors are merged with the voltagecontrolled
properties of MOSFETs.
Advantages to the user:
? rugged, short-circuit-proof device
(S-series, D-series and E-series)
? operation without protective snubber
networks possible
? frequency range to well above 100 kHz
? low switching losses
? compact equipment design
? high efficiency
The IGBT is suitable for numerous applications
in power electronics, especially in Pulse Width
Modulated servo and three-phase drives
requiring high dynamic range control and low
noise. It also can be used in Uninterruptible
Power Supplies (UPS), Switch Mode Power
Supplies (SMPS), and other power circuits
requiring high switch repetition rates. IGBTs
improve dynamic performance and efficiency
and reduce the level of audible noise. IGBTs
are equally suitable in resonant converter
circuits. Optimized IGBTs are available for
both low conduction loss and low switching
loss. See table 1 and 2.
Discrete standard "G" series IGBTs are
characterized by a high control gain, which
limits their short-circuit withstand time. Newer
"S", "D" and "E" series products utilize newly
developed IGBT chips capable of withstanding
up to 10 μs in short-circuit, even with a 15 V
gate drive.
A switch is only as good as its companion freewheeling
diode. For this reason, all IGBTs with
integrated diodes incorporate ultra-fastrecovery
epitaxial diodes (FREDs) with very
low reverse recovery charge (Qrr). These same
diodes are also available as separate elements
for use in IGBT circuits or any other application
requiring high diode switching speeds.
The IGBT modules use Direct Copper Bonded
(DCB) substrates, which consist of an
aluminium oxide (Al2O3) insulator to which
copper is directly bonded using the latest
techniques developed by IXYS.

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