128-mbit 8 Mbit X16 Or 16 Mbit X8 , Multiple Bank, Page, Dual Boot 3 V Supply Flash Memory

  The M29DW127G is a 128-Mbit (8 Mbit x16 / 16 Mbit x8) non-volatile Memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. At power-up the Memory defaults to its read mode. The M29DW127G features an asymmetrical block architecture, with 8 parameter and 62 main blocks, divided into four banks, A, B, C and D, providing multiple bank operations. While programming or erasing in one bank, read operations are possible in any other bank. The bank architecture is summarized in Table 2. Four of the parameter blocks are at the top of the Memory address space, and four are at the bottom. Program and erase commands are written to the command Interface of the Memory An on- chip program/erase controller simplifies the process of programming or erasing the Memory by taking care of all of the special operations that are required to update the Memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the Memory is consistent with JEDEC standards. The Chip Enable, Output Enable and Write Enable signals control the bus operations of theM29DW127G's datasheet is the same as M29DW127G
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M29DW127G pinout from datasheet
Item: M29DW127G
File Size : 257 KB
Pages : 95 Pages

Other Part Numbers in this pdf file

M29DW127G70ZA6E   M29DW127G70NF6F   M29DW127G70NF6E   M29DW127G60ZA6F   M29DW127G60ZA6E   M29DW127G60NF6F   M29DW127G60NF6E  
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