Silicon Pin Photodiode

Part No :
BP104 pinout
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BP104 pinout,BP104 pin diagram
BP104
Vishay Semiconductors
Silicon PIN Photodiode
Description
BP104 is a high speed and high sensitive PIN photo-
Diode in a miniature flat plastic package. Its top view
construction makes it ideal as a low cost replacement
of TO-5 devices in many applications.
The epoxy package itself is an IR Filter spectrally
matched to GaAs or GaAs on GaAlAs IR emitters
p
= 950 nm). The large active area combined with a
flat case gives a high sensitivity at a wide viewing
angle.
948386
Features
Large radiant sensitive area (A = 7.5 mm )
Wide angle of half sensitivity:
ϕ
= ± 65°
High photo sensitivity
e3
Fast response times
Small junction capacitance
Plastic case with IR filter: (λ = 950 nm)
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
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Applications
• High speed photo detector
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse voltage
Power dissipation
Junction temperature
Storage temperature range
Soldering temperature
Thermal resistance
junction / ambient
t
3s
T
amb
25 °C
Test condition
Symbol
V
R
P
V
T
j
T
stg
T
sd
R
thJA
Value
60
215
100
- 55 to + 100
260
350
Unit
V
mW
°C
°C
°C
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Breakdown voltage
Reverse dark current
Diode capacitance
Test condition
I
R
= 100
μA,
E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 3 V, f = 1 MHz, E = 0
Symbol
V
(BR)
I
ro
C
D
C
D
Min
60
2
70
25
40
30
Typ.
Max
Unit
V
nA
pF
pF
Document Number 81500
Rev. 1.4, 20-Nov-06
www.vishay.com
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