Bt136 Series E Triacs Sensitive Gate

Part No :
BT136-600E pinout
File Size : 4 KB
Pages : 6 Pages

Other Part Numbers in this pdf file

BT136-800E  
NXP Semiconductors

find BT136-600E datasheet
BT136-600E pinout,BT136-600E pin diagram
Philips Semiconductors
Product specification
sensitive Gate
GENERAL DESCRIPTION
Passivated, sensitive Gate Triacs in a
plastic envelope, intended for use in
general
purpose
bidirectional
switching
and
phase
control
applications, where high sensitivity is
required in all four quadrants.
BT136 series E
QUICK REFERENCE DATA
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
BT136-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
600E
600
4
25
MAX.
800E
800
4
25
UNIT
V
A
A
PINNING - TO220AB
PIN
1
2
3
tab
DESCRIPTION
main terminal 1
PIN CONFIGURATION
tab
SYMBOL
T2
main terminal 2
main terminal 2
1 23
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
mb
107 ˚C
full sine wave; T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 6 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-600
600
1
4
25
27
3.1
50
50
50
10
2
5
5
0.5
150
125
MAX.
-800
800
UNIT
V
A
A
A
A
2
s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak Gate current
Peak Gate voltage
Peak Gate power
Average Gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the Triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
June 2001
1
Rev 1.400