Sot-23 Bipolar Transistors Transistor Npn

Part No :
C1815 pinout
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Pages : 2 Pages

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find C1815 datasheet
C1815 pinout,C1815 pin diagram
C1815
TRANSISTOR(NPN)
FEATURES
* Power dissipation
P
CM
:
0.2
W (Tamb=25
O
C)
* Collector current
I
CM
:
0.15
mA
* Collector-base voltage
V
(BR)CBO
:
60
V
Operating and storage junction temperature range
*
T
J
,T
stg
: -55
O
C to +150
O
C
COLLECTOR
3
MECHANICAL DATA
*
*
*
*
*
BASE
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
1
EMITTER
2
0.055(1.40)
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single Phase half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
O
0.019(2.00)
0.071(1.80)
1
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
( @ TA = 25
O
C unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (I
C
= 100mA, I
E
=0)
Collector-emitter breakdown voltage (I
C
= 0.1mA, I
B
=0)
Collector cut-off current (V
CB
= 60V, I
E
=0)
Collector cut-off current (V
CB
= 50V, I
B
=0)
Emitter cut-off current (V
EB
= 5V, I
C
=0)
DC current gain (V
CE
= 6V, I
C
= 2MA
Collector-emitter saturation voltage (I
C
= 100mA, I
B
= 10mA)
Base-emitter voltage (I
C
= 100mA, I
B
= 10mA)
Transition frequency (V
CE
= 10V, I
C
= 1mA, f= 30MH
Z
)
CLASSIFICATION OF h
FE(1)
RANK
Range
DEVICE MARKING
Note : "Fully ROHS compliant", "100% Sn plating (Pb-free)".
L
130 - 200
HF
2007-3
H
200 - 400
SYMBOL
V
(BR)CBO
V
(BR)CEO
I
CBO
I
CEO
I
EBO
h
FE(1)
V
CE(sat)
V
BE(sat)
f
T
MIN
60
50
-
-
-
130
-
-
80
TYP
-
-
-
-
-
-
-
-
-
MAX
-
-
0.1
0.1
0.1
400
0.25
1
-
UNITS
V
V
mA
mA
mA
-
V
V
MHz