Full - Bridge Mosfet Power Module

Part No :
APTM120H57FT3G pinout
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Pages : 6 Pages

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Microsemi Corporation

find APTM120H57FT3G datasheet
APTM120H57FT3G pinout,APTM120H57FT3G pin diagram
APTM120H57FT3G
Full - Bridge
13 14
Q1
Q3
V
DSS
= 1200V
R
DSon
= 570mΩ typ @ Tj = 25°C
I
D
= 17A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7
®
FREDFETs
- Low R
DSon
- Low input and Miller capacitance
- Low Gate charge
- Fast intrinsic reverse Diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
Max ratings
1200
17
13
68
±30
684
390
22
50
3000
Unit
V
A
V
mΩ
W
A
mJ
18
22
19
Q2
23
8
Q4
7
11
10
26
4
3
29
15
30
31
R1
32
16
27
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
2
3
4
7
8
10 11 12
14
13
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25°C
T
c
= 80°C
T
c
= 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6
APTM120H57FT3G Rev 1
July, 2006