Field Effect Transistor Silicon P Channel Mos Type Power Management Switch Applications High-current Switching Applications

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SSM3J120TU pinout
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TOSHIBA Semiconductor CORPORATION

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SSM3J120TU pinout,SSM3J120TU pin diagram
SSM3J120TU
TOSHIBA Field Effect Transistor
Silicon P Channel MOS Type
SSM3J120TU
Power Management Switch Applications
High-Current Switching Applications
1.5 V drive
Low on-resistance
R
on
= 140 mΩ (max) (@V
GS
= -1.5 V)
R
on
= 78 mΩ (max) (@V
GS
= -1.8 V)
R
on
= 49 mΩ (max) (@V
GS
= -2.5 V)
R
on
= 38 mΩ (max) (@V
GS
= -4.0 V)
2.1±0.1
1.7±0.1
0.65±0.05
+0.1
0.3 -0.05
3
0.166±0.05
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Symbol
V
DS
V
GSS
I
D
I
DP
P
D
(Note 1)
P
D
(Note 2)
T
ch
T
stg
Rating
-20
±
8
-4.0
-8.0
800
500
150
−55~150
Unit
V
2.0±0.1
1
2
A
Drain power dissipation
Channel temperature
Storage temperature
mW
°C
°C
0.7±0.05
V
UFM
1. Gate
2. Source
3. Drain
Using continuously under heavy loads (e.g. the application of
JEDEC
high temperature/current/voltage and the significant change in
JEITA
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-2U1A
operating temperature/current/voltage, etc.) are within the
Weight: 6.6mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1 : Mounted on ceramic board
(25.4 mm
×
25.4 mm
×
0.8 t, Cu Pad: 645 mm
2
)
Note 2 : Mounted on FR4 board
(25.4 mm
×
25.4 mm
×
1.6 t, Cu Pad: 645 mm
2
)
Note:
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Symbol
Test Condition
Min
−20
−12
−0.3
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
6.1
Typ.
12.1
28
34
47
60
1484
185
169
67
92
Max
−10
±1
−1.0
38
49
78
140
pF
pF
pF
ns
Unit
V
μA
μA
V
S
V
(BR) DSS
I
D
= −1
mA, V
GS
=
0
V
(BR) DSX
I
D
= −1
mA, V
GS
=
+8 V
I
DSS
I
GSS
V
th
⏐Y
fs
V
DS
=
−20
V, V
GS
= 0
V
GS
= ±8
V, V
DS
=
0
V
DS
= −3
V, I
D
= −1
mA
V
DS
=
-3 V, I
D
=
-2.0 A
I
D
=
-3.0 A, V
GS
=
-4.0 V
Drain-Source ON-resistance
R
DS (ON)
I
D
=
-2.0 A, V
GS
=
-2.5 V
I
D
=
-1.0 A, V
GS
=
-1.8 V
I
D
=
-0.3 A, V
GS
=
-1.5 V
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
C
iss
C
oss
C
rss
t
on
t
off
V
DS
= −10
V, V
GS
=
0
f
=
1 MHz
V
DD
= −10
V, I
D
= −2.0
A
V
GS
=
0 ~
−2.5
V, R
G
=
4.7
Ω
1
2007-11-01