Toshiba Insulated Gate Bipolar Transistor Silicon N Channel Igbt

Part No :
GT60M303 pinout
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Pages : 6 Pages

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TOSHIBA Semiconductor CORPORATION

find GT60M303 datasheet
GT60M303 pinout,GT60M303 pin diagram
GT60M303
ELECTRICAL CHARACTERISTICS
(Ta = 25
°C
)
CHARACTERISTIC
Gate Leakage Current
Collector Cut−off Current
Gate−Emitter Cut−off Voltage
Collector−Emitter Saturation Voltage
Collector−Emitter Saturation Voltage
Input Capacitance
Rise Time
Switching Time
Turn−On Time
Fall Time
Turn−Off Time
Emitter-Collector Forward Voltage
Reverse Recovery Time
Thermal Resistance
Thermal Resistance
SYMBOL
I
GES
I
CES
V
GE (OFF)
V
CE (sat) (1)
V
CE (sat) (2)
C
ies
t
r
t
on
t
f
t
off
V
ECF
t
rr
R
th (j−c)
R
th (j−c)
I
EC
= 15A V
GE
= 0
I
F
= 15A V
GE
= 0
di / dt =
−20A
/
μs
TEST CONDITION
V
GE
= ±25V, V
CE
= 0
V
CE
= 900V, V
GE
= 0
I
C
= 60mA, V
CE
= 5V
I
C
= 10A V
GE
= 15V
I
C
= 60A, V
GE
= 15V
V
CE
= 10V, V
GE
= 0, f = 1MHz
MIN
3.0
TYP.
1.6
2.1
3800
0.35
0.46
0.25
0.60
1.5
0.7
MAX
±500
1.0
6.0
2.2
2.7
0.60
0.75
0.40
0.70
2.0
2.5
0.74
4.0
V
μs
°C / W
°C / W
μs
UNIT
nA
mA
V
V
V
pF
2
2006-11-01