4a, 600v N-channel Mosfet

  SVD4N60T F is an N-channel enhancement mode power MOS field effect Transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC Converters and H-bridge PWM Motor Drivers
Item: SVD4N60F
File Size : 61 KB
Pages : 7 Pages

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